Search results for "Thermal Hall effect"
showing 4 items of 4 documents
High-Temperature Hall Measurements on BaSnO3Ceramics
2005
Simultaneous Hall and conductivity measurements were performed in situ between 650° and 1050°C on n-type semiconducting BaSnO3ceramics. The variation of the Hall mobility and the Hall carrier density as a function of oxygen partial pressure between 102 and 105 Pa and of temperature was investigated. At temperatures below 900°C the conductivity exhibits a dependence on temperature and oxygen partial pressure which is mainly determined by variations of the Hall mobility. Above 900°C most of the significant dependence is due to a variation in carrier density. Furthermore, a simple defect model assuming doubly ionized oxygen vacancies and acceptor impurities is discussed for BaSnO3.
Structural characterization and anomalous Hall effect of Rh2MnGe thin films
2015
Abstract We present the preparation, structural investigations, and transport properties of L21-ordered epitaxial Rh2MnGe Heusler thin films grown by pulsed laser deposition. The films grow (1 0 0) oriented on (1 0 0)MgO substrate with [ 0 1 1 ] Rh 2 MnGe ∥ [ 0 1 0 ] MgO . The rocking curve widths of (4 0 0) reflections are below 1° and decrease with increasing deposition temperature. The flat surface of the thin films allowed lithographic patterning enabling quantitative magnetotransport measurements. We measured resistivity and the Hall effect. We suggest skew scattering as the dominant effect in the temperature dependent anomalous Hall effect, consistent with the theoretically expected s…
Evidence of charge-carrier compensation effects inLa0.67Ca0.33MnO3
1998
We report on detailed Hall-effect measurements of thin films of ${\mathrm{La}}_{0.67}{\mathrm{Ca}}_{0.33}{\mathrm{MnO}}_{3}$ above and below the metal-insulator transition. In the metallic ferromagnetic regime, we find a temperature-independent holelike nominal charge-carrier density ${n}_{h}^{*}=1.3$ per unit cell, consistent with a partly compensated Fermi surface. The mobility is only 92 ${\mathrm{mm}}^{2}/\mathrm{V}\mathrm{}\mathrm{s}$ at 4 K, and decreases with increasing temperature. Huge negative magnetoresistivity results from an increase in mobility. In low magnetic fields or at high temperatures, an anomalous electronlike contribution dominates the Hall voltage. For possible side …
Berry curvature for magnetoelastic waves
2020
The Berry curvature for magnons in ferromagnetic films gives rise to new phenomena such as thermal Hall effect and a shift of a magnon wave packet at the reflection at the edge of the magnetic film. In this paper, we calculate the Berry curvature of magnetoelastic waves in ferromagnets. In order to calculate the Berry curvature, we first formulate the eigenvalue equation into a Hermitian form from the dynamical equation of motion. We find that the Berry curvature of the magnetoelastic waves shows a peak at the crossing point of the dispersions of magnons and elastic waves, and its peak value is dependent on the hybridization gap at the crossing point. In addition, the behavior of the Berry …